Fluorophore situating near the metal-dielectric interface can be effectively coupled with plasmons in the metal giving interesting solutions for the nanosized waveguides, nanolasers and fluorescent sensors. In the present report we applying the layered metal-semiconductor structures for the control of fluorescence from the aluminium doped zinc oxide, which could be prospective for defect-based single photon emitters. Particularly film of ZnO:Al is deposited on the 50 nm gold layer, which was attached to the semicylindrical prism. Sample was irradiated by UV light at the wavelength 355 nm from the Nd:YAG laser. Angles j of detection were scanned in the range from 25 to 75° on the side of prism. It was revealed that the intensity of defect-related fluorescence from ZnO:Al film can be significantly enhanced at resonance angles, which are near 42° for the p-polarized light and near 55° for the s-polarized light (see Fig. 1 as an example). We suggest that p-polarized fluorescence at 42° is effectively coupled with plasmons and s-polarized fluorescence at 55° is connected with leaky modes outgoing from the film working in the guiding regime.